d a t a sh eet product data sheet 2003 nov 07 discrete semiconductors PMBD7100 high-speed double diode db ook, halfpage m3d088
2003 nov 07 2 nxp semiconductors product data sheet high-speed double diode PMBD7100 features ? small plastic smd package ? high switching speed: max. 4 ns ? continuous reverse voltage: max. 100 v ? repetitive peak reverse voltage: max. 100 v ? repetitive peak forward current: max. 450 ma. applications ? high-speed switchin g in thick and thin-film circuits. description the PMBD7100 consists of two high-speed switching diodes with common cathodes, fabricated in planar technology, and encapsulated in the small sot23 smd plastic package. marking note 1. * = p: made in hong kong. * = t: made in malaysia. * = w: made in china. pinning type number marking code (1) PMBD7100 *3a pin description 1 anode (a1) 2 anode (a2) 3 common connection handbook, halfpage 2 1 3 top view mam383 2 1 3 fig.1 simplified outline (sot23) and symbol. ordering information type number package name description version PMBD7100 ? plastic surface mounted package; 3 leads sot23
2003 nov 07 3 nxp semico nductors product data sheet high-speed double diode PMBD7100 limiting values in accordance with the absolute maximum rating system (iec 60134). note 1. device mounted on an fr4 printed-circuit board. symbol parameter conditions min. max. unit per diode v rrm repetitive peak reverse voltage ? 100 v v r continuous reverse voltage ? 100 v i f continuous forward current single diode loaded; see fig.2; note 1 ? 215 ma double diode loaded; see fig.2; note 1 ? 125 ma i frm repetitive peak forward current ? 450 ma i fsm non-repetitive peak forward current square wave; t j = 25 c prior to surge; see fig.4 t p = 1 s ? 4 a t p = 1 ms ? 1 a t p = 1 s ? 0.5 a p tot total power dissipation t amb = 25 c; note 1 ? 250 mw t stg storage temperature ? 65 +150 c t j junction temperature ? 150 c
2003 nov 07 4 nxp semico nductors product data sheet high-speed double diode PMBD7100 electrical characteristics t amb = 25 c unless otherwise specified. thermal characteristics note 1. device mounted on an fr4 printed-circuit board. symbol parameter conditions max. unit per diode v f forward voltage see fig.3 i f = 1 ma 715 mv i f = 10 ma 855 mv i f = 50 ma 1 v i f = 150 ma 1.25 v i r reverse current see fig.5 v r = 25 v 30 na v r = 100 v 2.5 a v r = 25 v; t j = 150 c 60 a v r = 100 v; t j = 150 c 100 a c d diode capacitance v r = 0 v; f = 1 mhz; see fig.6 1.5 pf t rr reverse recovery time when switched from i f = 10 ma to i r = 10 ma; r l = 100 ? ; measured at i r = 1 ma; see fig.7 4 ns v fr forward recovery voltage when switched from i f = 10 ma to t r = 20 na; see fig.8 1.75 v symbol parameter conditions value unit r th j-tp thermal resistance from junction to tie-point 360 k/w r th j-a thermal resistance from junction to ambient note 1 500 k/w
2003 nov 07 5 nxp semico nductors product data sheet high-speed double diode PMBD7100 graphical data 0 200 300 0 100 200 mbd033 100 i f (ma) t ( c) amb o single diode loaded double diode loaded device mounted on an fr4 printed-circuit board. fig.2 maximum permissible continuous forward current as a function of ambient temperature. handbook, halfpage 0 0.5 1.0 2.0 300 0 100 200 1.5 mdb820 250 150 50 i f (ma) v f (v) (1) (2) (3) (1) t j = 150 c; typical values. (2) t j = 25 c; typical values. (3) t j = 25 c; maximum values. fig.3 forward current as a function of forward voltage. handbook, full pagewidth mbg704 10 t p ( s) 1 i fsm (a) 10 2 10 ? 1 10 4 10 2 10 3 10 1 fig.4 maximum permissible non-repetitive peak fo rward current as a function of pulse duration. based on square wave currents. t j = 25 c prior to surge.
2003 nov 07 6 nxp semico nductors product data sheet high-speed double diode PMBD7100 handbook, halfpage 200 100 50 0 150 mdb821 10 2 10 1 10 -1 10 -2 10 ? 3 i r ( a) t j ( c) (1) (2) (3) fig.5 reverse current as a function of junction temperature. (1) v r = 100 c; maximum values. (2) v r = 100 c; typical values. (3) v r = 25 c; typical values. handbook, halfpage 0 5 10 15 0.8 0.6 0.2 0 0.4 mdb822 c d (pf) v r (v) fig.6 diode capacitance as a function of reverse voltage; typical values. f = 1 mhz; t j = 25 c.
2003 nov 07 7 nxp semico nductors product data sheet high-speed double diode PMBD7100 handbook, full pagewidth t rr (1) i f t output signal t r t t p 10% 90% v r input signal v = v i x r rf s r = 50 s ? i f d.u.t. r = 50 i ? sampling oscilloscope mga881 fig.7 reverse recovery voltage test circuit and waveforms. (1) i r = 1 ma. t r t t p 10% 90% i input signal r = 50 s ? i r = 50 i ? oscilloscope ? 1 k ? 450 d.u.t. mga882 v fr t output signal v fig.8 forward recovery voltage test circuit and waveforms.
2003 nov 07 8 nxp semico nductors product data sheet high-speed double diode PMBD7100 package outline unit a 1 max. b p cd e e 1 h e l p qw v references outline version european projection issue date 97-02-28 99-09-13 iec jedec eiaj mm 0.1 0.48 0.38 0.15 0.09 3.0 2.8 1.4 1.2 0.95 e 1.9 2.5 2.1 0.55 0.45 0.1 0.2 dimensions (mm are the original dimensions) 0.45 0.15 sot23 to-236ab b p d e 1 e a a 1 l p q detail x h e e w m v m a b a b 0 1 2 mm scale a 1.1 0.9 c x 12 3 plastic surface mounted package; 3 leads sot2 3
2003 nov 07 9 nxp semico nductors product data sheet high-speed double diode PMBD7100 data sheet status notes 1. please consult the most recently issued document before initiating or completing a design. 2. the product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. the latest pr oduct status information is available on the internet at url http://www.nxp.com. document status (1) product status (2) definition objective data sheet development this document contains data from the objective specification for product development. preliminary data sheet qualification this document contains data from the preliminary specification. product data sheet production this document contains the product specification. disclaimers general ? information in this docu ment is believed to be accurate and reliable. however, nxp semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shal l have no liability for the consequences of use of such information. right to make changes ? nxp semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. this document supersedes and replaces all information supplied prior to the publication hereof. suitability for use ? nxp semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, airc raft, space or life support equipment, nor in applications where failure or malfunction of an nxp semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. nxp semiconductors accepts no liability for incl usion and/or use of nxp semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer?s own risk. applications ? applications that are described herein for any of these products are fo r illustrative purposes only. nxp semiconductors makes no representation or warranty that su ch applications will be suitable for the specified use without further testing or modification. limiting values ? stress above one or more limiting values (as defined in the absolute maximum ratings system of iec 60134) may cause permanent damage to the device. limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the characteristics sections of this document is not implied. expo sure to limiting values for extended periods may af fect device reliability. terms and conditions of sale ? nxp semico nductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile /terms, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by nxp semiconductors. in case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. no offer to sell or license ? nothing in th is document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. export control ? this document as well as the item(s) described herein may be subject to export control regulations. export might require a prior authorization from national authorities. quick reference data ? the quick refere nce data is an extract of the product data given in the limiting values and characteristics sections of this document, and as such is not complete, exhaustive or legally binding.
nxp semiconductors contact information for additional information please visit: http://www.nxp.com for sales offices addresses send e-mail to: salesaddresses@nxp.com ? nxp b.v. 2009 all rights are reserved. reproduction in whole or in part is prohibited without the prior written consent of the copyright owne r. the information presented in this document does not form part of any quotation or contract, is believed to be accurate and reli able and may be changed without notice. no liabilit y will be accepted by the publisher for any consequen ce of its use. publicat ion thereof d oes not con vey nor imply any license under patent- or other industrial or intellectual property rights. customer notification this data sheet was changed to reflect the new company name nxp semiconductors. no changes were made to the content, except for the legal definitions and disclaimers. printed in the netherlands r76/01/pp10 date of release: 2003 nov 07 document order number: 9397 750 12001
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